至今為止，以原子層沉積氧化鉿鋯作為鐵電層對其極化量的研究中，鐵電層厚度在十奈米以下的極化值漸漸下降，且在五奈米以下顯示出較少的鐵電性。在此篇論文中，使用兩種不同氮化工程對五奈米的鐵電氧化鉿鋯影響進行研究，以原子層沉積氮化鉿製作了三明治夾層的結構氮化鉿／氧化鉿鋯／氮化鉿，在快速熱退火過程處理中，上層氮化鉿抑制了鐵電層與上電極的氧化，抑制了氧空缺的形成，因此在極化值和漏電流的表現皆有提升。另一種為使用聯氨前驅物於鐵電層和下層氧化層之間進行表面處理，在給予不同次數聯氨處理下討論鐵電性的表現，在給予越多次數聯氨處理的樣品下會造成界面處缺陷越多導致鐵電性降低。最後，展示了一層垂直堆疊環繞式閘極鐵電場效電晶體，使用10奈米多晶矽作為通道，8奈米的鐵電氧化鉿鋯有顯示鐵電的行為，電流開關比約有四個級距且記憶窗大小可達1V，討論在不同的通道長度下電流特性上的表現。

So far, in the research on the polarization of the HfZrO2 (HZO) ferroelectric layer deposited by atomic layer, the polarization value of the ferroelectric layer thickness below ten nanometers gradually decreases, and the polarization value below five nanometers shows less. In this thesis, the effect of five-nanometer ferroelectric HZO was investigated using two different nitridation engineering. The sandwich structure of HfN/HZO/HfN was fabricated by atomic layer deposition. In the rapid thermal annealing process, the upper layer of HfN inhibits the oxidation between the ferroelectric layer and the upper electrode, and inhibits the formation of oxygen vacancies. The performance of polarization value and leakage current are improved. The other is to use hydrazine precursor to perform surface treatment between the ferroelectric layer and the chemical oxide. The performance of ferroelectricity is discussed under different cycles of hydrazine treatment. The ferroelectric performance will be discussed. Under the samples with more cycles of hydrazine treatment, the more defects at the interface were generated.
Finally, a vertically stacked GAA FeFET has fabricated, using 10 nm polysilicon as the channel, and 8 nm ferroelectric HZO shows ferroelectric behavior. With on/off ratio for about four orders, the memory window can reach 1V, and the performance of current characteristics under different channel length will be discussed.

論文審定書 i
誌謝 ii
中文摘要 iii
英文摘要 iv
目錄 v
圖目錄 vii
表目錄 x
第一章 緒論 11
1.1 前言 11
1.2 鐵電材料 13
1.3 實驗動機 15
第二章 插入氮化鉿（HfN）上下夾層對氧化鉿鋯（HfZrO2）鐵電性的研究 16
2.1 介紹 16
2.2 實驗步驟與流程 17
2.3 材料分析 21
2.3.1 穿透式電子顯微鏡 （Transmission Electron Microscopy, TEM） 21
2.3.2 低掠射角X光繞射儀 （Grazing Incidence Small Angle X-Ray Scattering, GIXRD） 22
2.4 結果與討論 23
2.4.1 鐵電特性 23
2.4.2 耐久性 27
2.4.3 閘極漏電流 29
2.4.4 崩潰電場 33
2.4.5 結論 35
第三章 聯氨處理對氧化鉿鋯（HfZrO2）鐵電性的研究 36
3.1 介紹 36
3.2 實驗步驟與流程 36
3.3 材料分析 40
3.3.1 穿透式電子顯微鏡 （Transmission Electron Microscopy, TEM） 40
3.3.2 低掠射角X光繞射儀 （Grazing Incidence Small Angle X-Ray Scattering, GIXRD） 40
3.3.3 X射線光電子能譜學（X-ray Photoelectron Spectroscopy, XPS） 42
3.4 結果與討論 45
3.4.1 鐵電特性 45
3.4.2 耐久性 45
3.4.3 閘極漏電流 48
3.4.4 崩潰電場 51
3.4.5 結論 52
第四章 垂直堆疊奈米片鐵電場效電晶體 53
4.1 介紹 53
4.2 元件製程步驟 53
4.3 結果與討論 58
4.3.1 穿透式電子顯微鏡 （Transmission Electron Microscopy, TEM） 58
4.3.2 電流特性曲線 60
4.4 結論 64
第五章 結論 65
參考文獻 66

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