本研究探討了銦金屬及其合金在半導體封裝中的應用潛力，特別是作為熱界面材料(thermal interface material，TIM)的優勢。銦因其卓越的導熱性和柔韌性，被認為是理想的散熱材料。本研究重點圍繞以下三個方向：
第一個方向為材料與製程選擇:純銦相較於銦合金，能形成更完整且均勻的介面金屬共化物（intermetallic compound，IMC）層。純銦的高金屬純度和穩定微觀結構促進了界面處的均勻分布，減少缺陷，提升接合可靠性，降低應力集中與失效風險，並提高長期穩定性。第二個方向為微觀結構分析:通過多種儀器對銦金屬及其合金與基板（Si/Ti/NiV/Au）間的界面反應進行分析，發現 Ni₃In₇ 和 Cu₁₁In₉ 是最穩定的金屬間化合物，對接合強度與可靠性起到關鍵作用。第三個方向為可靠度測試:在 Cu/In(Ag)/Si 結構中，使用離子研磨技術觀察橫截面。結果顯示，未經溫度循環的銦合金樣品結構穩定且無裂痕，而經過溫度循環後，樣品出現裂痕，結構穩定性降低。
本研究證實了銦金屬及其合金在半導體封裝中的應用具有顯著潛力。不僅展現出優異的熱傳導性能，還能顯著提升高功率電子產品的散熱效率。同時，研究得到的實驗數據，有助於進一步優化半導體封裝的散熱管理。

This study explores the potential of indium and its alloys in semiconductor packaging, focusing on their advantages as thermal interface materials (TIMs). Indium's excellent thermal conductivity and flexibility make it an ideal heat dissipation material. The research emphasizes three areas:
Material and Process Optimization: Pure indium forms more uniform intermetallic compound (IMC) layers than its alloys, enhancing bonding reliability and reducing defects.
Microstructure Analysis: Ni₃In₇ and Cu₁₁In₉ are identified as stable IMCs crucial for bonding strength and reliability.
Reliability Testing: Before temperature cycling, indium alloys show stable, crack-free structures. However, cycling induces cracks, reducing stability.
The findings confirm indium's potential to improve thermal management in high-power electronics by enhancing heat dissipation efficiency and ensuring long-term stability.

論文審定書 i
致謝 ii
摘要 iii
Abstract iv
目錄 v
圖次 x
表次 xiv
第一章 緒論 1
1.1研究背景 1
1.2研究動機及目的 2
第二章 文獻回顧 3
2.1 覆晶接合封裝 3
2.1.1 Flip Chip覆晶接合製程 4
2.1.2 Underfill 底部填充製程 5
2.2 半導體電子構裝的散熱議題 6
2.2.1 熱管理的類型 6
2.2.2 散熱材料的性質 8
2.2.3 散熱材料的種類 9
2.3銦片的基本性質介紹 12
2.3.1 銦片的規格及參數 12
2.3.2 銦片的應用介紹 13
2.3.3 銦片在半導體產業中的優勢 13
2.4 銦氧化層的生成 15
2.4.1 無助焊劑銦的焊接性實驗程序 15
2.4.2 銦氧化物對無助焊劑焊接性及回流的影響 16
2.4.3 潤濕角的重要性: 16
2.4.4 銦的原生氧化物與熱處理氧化物的區別 17
2.5金屬元素的耦合效應 19
2.5.1 Cu/In/Ni界面上的Cu₁₁In₉相和Ni₃In₇相 19
2.5.2 反應時間對微結構的影響 20
2.6金屬間化合物的生長動力學 22
2.6.1 液態/固態反應與固態/固態反應中的IMC差異 22
2.6.2 Ni(V)層的角色與轉化機制 23
2.6.3 IMC對界面性能及生長動力學的影響 23
2.6.4 高溫環境下IMC的生長和剝落對界面結構的影響 25
2.6.5 Ni-V-In相的形成機制 25
2.7新興散熱材料探索 27
2.7.1 低熔點合金在TIM中的應用 27
2.7.2 定向凝固技術在TIM研究中的應用 31
2.7.3 低熔點合金的未來展望 31
第三章 研究方法說明 32
3.1 研究計畫及目標 32
3.2 TIM散熱片製程 33
3.2.1 Pre-attached indium (預附銦層製程) 33
3.2.2 Indium preform (銦片預製製程) 34
3.3可靠度測試 35
3.3.1溫度循環試驗 35
3.3.2 JESD22-A104溫度循環標準 36
3.4截面製備及方法 37
3.4.1四大切片手法 38
3.4.2離子研磨技術 38
3.4.3離子研磨技術種類 39
3.5實驗樣品 41
3.5.1 Cu-In-Cu樣品 41
3.5.2 PTIM樣品 41
3.5.3 STIM(w/Flux) 樣品 42
3.6實驗方法 43
3.6.1 銦片與助焊劑反應實驗 43
3.6.2 Cu-In-Cu接合反應實驗 43
3.6.3 PTIM接合反應實驗 44
3.6.4 STIM(w/Flux) 接合反應實驗 44
3.7分析儀器 45
3.7.1 X射線光電子能譜儀(XPS，X-ray Photoelectron Spectroscopy) 45
3.7.2 X射線繞射儀(GIXRD， Grazing Incident X-ray Diffraction) 46
3.7.3 掃描式電子顯微鏡(SEM， Scanning Electron Microscope) 47
3.7.4 電子能量分散式光譜儀(EDS，Energy Dispersive Spectrometers) 48
3.7.5 高解析電子微探儀(EPMA，Electron Probe MicroAnalyzer) 49
第四章 研究結果及討論 50
4.1銦片與助焊劑反應結果分析 50
4.1.1 XPS縱深分析 50
4.1.2 SEM及EDS分析 51
4.1.3 GIXRD低掠角分析 53
4.2 CU-IN-CU接合反應結果分析 56
4.2.1 SAT分析 56
4.2.2 SEM及EDS分析 56
4.2.3 EPMA分析 60
4.3 PTIM (T0) 接合反應結果分析 62
4.3.1 SAT分析 62
4.3.2 SEM及EDS分析 62
4.3.3 EPMA分析 65
4.4 PTIM (TCG200) 接合反應結果分析 69
4.4.1 SAT分析 69
4.4.2 SEM及EDS分析 70
4.4.3 EPMA分析 73
4.5 STIM(W/FLUX) 接合反應結果分析 82
4.5.1 SAT分析 82
4.5.2 SEM及EDS分析 82
4.5.3 EPMA分析 85
第五章 結論 89
5.1實驗總結 89
5.2未來展望 90
參考文獻 91

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