基於未來的無線通訊系統將朝向低功率消耗與高能源效率去發展，對於無線發射機的晶片設計將是嚴峻的挑戰，本論文的晶片設計著重在短距離固定波包調制系統之發射功率放大的應用上。為了克服在低消耗功率條件下仍維持著高增益與高效率之功率放大功能，因此本論文基於一般注入鎖定發射機架構，設計此架構所需之高效率振盪器CMOS晶片。本論文主要分為兩部分，首先就注入鎖定振盪器進行理論分析，並設計一變壓器回授之注入鎖定振盪器，作為驅動放大器之用。接下來第二部分論述E類功率放大器理論，並以此理論為基礎設計一變壓器回授之注入鎖定E類功率振盪器，使其具備兩個特徵：一是利用E類操作特性，輸出電壓正比於操作電壓達到振盪器輸出振幅可調；另一則是利用注入鎖定原理，藉由電壓調整端電壓改變達到振盪器輸出相位可調。

Since the development of wireless communication system goes toward low power and high energy efficiency, design of wireless transmitter integrated circuits (ICs) becomes more challenging. This research focuses on IC designs for efficient power amplification applications in short-range constant-envelope modulation systems. To achieve high gain and high efficiency with low power consumption, this research aims at an injection-locked transmitter with highly efficient CMOS oscillators. The thesis consists of two main parts. Firstly, a transformer-feedback CMOS oscillator is designed as a drive amplifier based on injection locking. Secondly, a transformer-feedback CMOS power oscillator is designed using class-E theory to possess two main functions. One is to tune the oscillation amplitude by changing the supply voltage. The other is to tune the oscillation phase by varying the tuning voltage.

論文審定書 .................................................................................................................. i
誌謝 .............................................................................................................................. ii
摘要 ............................................................................................................................ iii
Abstract ...................................................................................................................... iv
目錄 .............................................................................................................................. v
圖目錄 ....................................................................................................................... vii
表目錄 ..................................................................................................................... viii
第一章序論.................................................................................................................. 1
1.1 研究背景與動機............................................................................................ 1
1.2 章節規劃........................................................................................................ 6
第二章注入鎖定振盪器 ............................................................................................. 8
2.1 注入鎖定理論................................................................................................ 8
2.1.1 歷史沿革............................................................................................ 8
2.1.2 廣義注入鎖定方程式........................................................................ 9
2.1.3 相位鎖定程序.................................................................................. 12
2.2 晶片電路設計.............................................................................................. 14
2.2.1 振盪器振盪條件.............................................................................. 14
2.2.2 電路架構與設計.............................................................................. 16
2.3 晶片電路模擬與量測結果.......................................................................... 24
第三章注入鎖定 E 類功率振盪器 ........................................................................... 28
3.1 E 類功率振盪器原理 .................................................................................. 29
3.1.1 E 類功率放大器理論 ...................................................................... 29
3.1.2 振盪條件.......................................................................................... 32
3.1.3 注入鎖定於功率振盪器之現象...................................................... 34
3.2 晶片電路設計.............................................................................................. 35
3.2.1 電路架構.......................................................................................... 35
3.2.2 電路設計流程.................................................................................. 36
3.3 晶片電路模擬與量測結果.......................................................................... 41
第四章結論................................................................................................................ 49
參考文獻 ..................................................................................................................... 50

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