本實驗透過自行設計之物理汽相傳輸法 (Physical Vapor Transport, PVT) 設備以及石墨熱場生長4H碳化矽 (Silicon Carbide, SiC)單晶。在長晶時控制適合生長的壓力及溫度，使用氬氣 (Argon, Ar)當作載流氣體，讓碳化矽原料昇華並輸送至籽晶上進行生長。
本研究透過更改實驗方式，改變碳化矽籽晶於整個熱場中的位置，並選擇適當石墨板及石墨膠，使得碳化矽晶體更傾向生長出完整單晶，同時改善品質。成功生長的晶體經過切片處理後，經過熔融KOH蝕刻碳化矽晶圓後，將一片片晶圓透過紫外光燈(UV light)、光學顯微鏡 (Optical Microscope, OM)、能量散射光譜儀(Energy Dispersive Spectroscopy, EDS)、拉曼光譜 (Raman spectroscopy)、高解析X光繞射分析儀 (HRXRD)及四點探針 (Four point probe)來觀測、分析晶圓的表面形貌、多型分布、電性、品質及缺陷等，確立更加適合碳化矽單晶生長之條件。

In this experiment, 4H silicon carbide (SiC) single crystals were grown using a custom-designed Physical Vapor Transport (PVT) apparatus and a graphite heating field. During the crystal growth process, pressure and temperature were carefully controlled, and argon gas (Ar) was utilized as the carrier gas to transport the sublimated silicon carbide material onto the seed crystal for growth.
By modifying the experimental approach, the position of the silicon carbide seed crystal within the entire heating field was altered, and appropriate graphite plates and graphite adhesive were selected to promote the growth of complete single crystals and improve their quality. After successful crystal growth, the crystals were sliced and subjected to molten KOH etching to reveal the SiC wafers' surface morphology. These wafers were then analyzed using ultraviolet light, an optical microscope (OM), energy dispersive spectroscopy (EDS), Raman spectroscopy, high-resolution X-ray diffraction analysis (HRXRD), and Four point probe to observe and analyze the surface morphology, polytype distribution, electricity, quality and defects, etc., thus establishing conditions more suitable for silicon carbide single crystal growth.

論文審定書 i
誌謝 ii
摘要 iii
Abstract iv
目錄 v
圖次 viii
表次 xi
第一章 序論 1
1.1 前言 1
1.2 研究動機 2
第二章 理論基礎與文獻回顧 3
2.1 碳化矽(Silicon Carbide, SiC)基本性質 3
2.2 碳化矽製程 7
2.2.1 碳化矽單晶生長法 7
2.2.2 碳化矽單晶生長機制 9
2.2.3 碳化矽單晶生長變因 10
2.3 碳化矽之缺陷 11
2.3.1 微管 11
2.3.2 差排 12
2.3.3 疊差 12
2.3.4 多型碳化矽 14
2.4 有利於4H-SiC單晶生長之因素 15
2.4.1 因素一：氣相組成 15
2.4.2 因素二：溫度 15
2.4.3 因素三：氮滲透 15
2.4.4 因素四：籽晶面 16
2.4.5 因素五：添加CeO2 16
第三章 實驗內容 18
3.1 實驗流程 18
3.2 實驗步驟 18
3.2.1 籽晶固定 18
3.2.2 晶體生長 19
第四章 實驗結果 20
4.1 改善過程及成果 20
4.1.1 石墨Holder 20
4.1.2 籽晶黏貼膠 22
4.1.3 石墨紙環 22
4.2 長晶與切片結果 23
4.2.1 23S09晶體及切片後資訊 24
4.2.2 23S17晶體及切片後資訊 26
4.2.3 23S18晶體及切片後資訊 28
4.2.4 23S20晶體及切片後資訊 30
4.3 分析儀器 33
4.3.1 光學顯微鏡(Optical microscope) 33
4.3.2 掃描式電子顯微鏡(SEM)及能量散射光譜儀(EDS) 33
4.3.3 拉曼光譜儀(Raman spectroscope) 34
4.3.4 四點探針(Four point probe) 34
4.3.5 高解析X光繞射分析儀(HRXRD) 35
4.4 碳化矽晶圓量測與分析 35
4.4.1 拉曼光譜儀 35
4.4.2 OM光學顯微鏡 40
4.4.3 四點探針 41
4.4.4 HR-XRD 45
4.4.5 EDS分析 49
第五章 結論 51
參考文獻 52

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