本論文第一部分首先利用鎊線技術將設計於IPD製程中的巴倫器與設計於CMOS製程中的射頻前端接收機進行整合設計。設計流程為分別對射頻前端接收機與變壓器形式巴倫器作設計，並對鎊線建立電磁模型，個別電路間形成共軛阻抗匹配以達到最大功率轉移及雜訊最佳化。而在射頻接收機前端電路因採用直接降頻架構，因此整合時將巴倫器置於差動式低雜訊放大器前端，並利用IPD製程之低損耗特性來降低巴倫器之植入損耗，藉以改善整體接收機的雜訊指數。第二部分採用上述兩種不同製程設計垂直耦合變壓器形式巴倫器，結構上則將一次測線圈設計於IPD製程中，二次測線圈則設計於CMOS製程中，並於二次測線圈後接一差動式低雜訊放大器。設計上亦利用IPD製程特性使得巴倫器的損耗較小，有利於與後級差動式低雜訊放大器整合時有較佳之雜訊指數。最後則介紹了利用磁共振方法所發展之非接觸式垂直耦合技術來進行訊號傳遞，並且實現於印刷電路板上。

The first part of this thesis studies the wire-bonding technology for use in an integrated design of transformer balun and RF front-end receiver, which is realized by IPD and CMOS technology, respectively. In this part, the RF front-end receiver and the balun were designed separately, and the bondwire model was established based on electromagnetic simulation. For the maximum power transfer and optimal noise performance, the input impedance between the CMOS RF front-end receiver and the IPD balun was conjugate-matched. The IPD balun, placed in front of the differential LNA of a direct-conversion receiver, is designed using the IPD technology, thereby reducing the insertion loss, and subsequently improving the noise figure of the CMOS receiver. The second part of this thesis uses a vertically coupled transformer balun with a primary coil made by IPD technology and a secondary coil made by CMOS technology. This balun has a low-loss advantage when integrated with a posterior differential LNA. Finally, the magnetic resonance coupling for use in signal transmission is studied and experimented on a printed circuit board.

論文審定書 i
誌謝 ii
中文摘要 iii
英文摘要 iv
目錄 v
圖表目錄 vii
第一章 緒論 1
1.1 研究背景與動機 1
1.2 論文章節規劃 5
第二章 射頻接收機架構與前端之寬頻低雜訊放大器 7
2.1 超外差接收機架構 7
2.1.1 鏡像訊號問題 8
2.1.2 中頻帶通濾波器與選擇性 9
2.2 直接降頻接收機架構 10
2.3 射頻接收機效能評估參數 14
2.4 寬頻低雜訊放大器電路架構 19
2.4.1 電阻並聯回授式架構 20
2.4.2 共閘極輸入式架構 22
第三章 CMOS與玻璃基板異質整合晶片設計 25
3.1 整合電路簡介與規劃 26
3.2 電路設計與架構 28
3.2.1 被動式巴倫器 30
3.2.2 利用雜訊抵銷機制之寬頻低雜訊放大器 36
3.2.3 被動式寬頻混波器 40
3.2.4 可變增益放大器 41
3.3 模擬與量測結果 44
第四章 使用非接觸式磁耦合互連之堆疊結構電路設計 51
4.1 非接觸式訊號傳遞簡介 51
4.1.1 電容式耦合 52
4.1.2 電感式耦合 54
4.2 異質晶片堆疊架構與電路設計 56
4.2.1 垂直耦合巴倫器設計 57
4.2.2 低雜訊放大器設計 59
4.3 模擬與晶片量測結果 61
4.4 利用磁共振方式實現非接觸式訊號傳遞 71
4.4.1 非諧振式磁耦合 71
4.4.2 利用磁共振磁耦合 72
4.4.3 利用磁共振磁耦合實現於有機基板 73
第五章 結論 82
參考文獻 84

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