基於拓樸絕緣體製作的光偵測器具有寬頻光電偵測的能力、優秀的載子傳輸性質和普遍的穩定性，這讓拓樸絕緣體適合用來製作高性能光電元件。
本實驗選用以電阻式加熱浮區法成長的拓樸絕緣體三碲化二銻晶體來製作樣品並進行光電導特性的量測。在單獨改變電壓、光強度、電導、環境壓力和入射光的波長等參數的情形下，測量三碲化二銻的光電流及響應度的變化。
實驗結果顯示，三碲化二銻在波長為300 nm到1000 nm的光照射下，響應度幾乎不隨光波長而變化。材料中電子態隨能量的分布狀況將影響其對不同能量的光子的吸收狀況，進而導致響應度隨入射光波長的不同而有所差異。例如二硫化鉬、二硫化錫和硒化鉍等材料，二硫化鉬和二硫化錫中價帶的電子態分布較為不均，導致它們對不同能量的光子吸收狀況差別較大，而硒化鉍中價帶電子態的分布非常均勻，但導帶的電子態分布不均，阻礙了部分電子的躍遷，使電子的躍遷出現差異，這些材料都是因為電子態的分布不均，導致響應度隨波長有明顯變化。三碲化二銻則因為其導帶電子態和價帶電子態的分布都非常均勻，使得電子對不同波長的光能量有著較為一致的吸收。這也造成了三碲化二銻在不同波長的光的照射下有較為一致的響應度。

The photodetectors based on topological insulators are capable of broadband light detection, excellent transport properties with high carrier mobility, and prevalent stability. A topological insulator is the best-suited material for making high-performance photodetectors.
The samples made by an antimony telluride crystal was grown by resistance heating floating zone process. The sample's photocurrent had been measured under changing the voltage, light intensity, conductance, environment pressure and the wavelength of light.
The main results are as follows, the response of antimony telluride hardly changes with the wavelength of light which is between 300 nm and 1000 nm. The electronic states in the material affect the absorption of photons with different energies, and lead to a responsivity which changes with the wavelength of light. The electronic states in the valence band of molybdenum disulfide and tin disulfide are non-uniform and lead to a disparity in the absorption of photons with different energies. The bismuth selenide has uniform electronic states in the valence band, but its non-uniform electronic states in the conduction band lead to disparity in an electronic transition. These materials all have the non-uniform electronic states and produce the responsivity which changes significantly with the wavelength of light. The antimony telluride has uniform electronic states in the valence band and the conduction band, it leads to uniform absorption of energy of light and consistent responsivity under the light with different wavelength.

目錄
論文審定書 i
摘要 ii
Abstract iii
目錄 iv
圖次 v
表次 vi
第一章 簡介 1
第1節 前言 1
第2節 研究動機 2
第二章 基本理論 3
第1節 拓樸絕緣體(Topological insulator) 3
第2節 光電導效應(Photoconductivity) 5
第3節 量子效率 (Quantum efficiency) 6
第4節 響應時間(Response time) 7
第5節 光電流(Photocurrent)與暗電流(Dark Current) 8
第6節 光增益(Photo-gain)與響應度(Responsivity) 9
第三章 樣品製備及儀器介紹 11
第1節 樣品製備 11
第2節 量測設備介紹 16
第3節 量測系統介紹 20
第四章 實驗結果與討論 21
第1節 電流-電壓特性圖(I-V圖) 21
第2節 光電流-電壓特性圖(I_P-V圖) 23
第3節 光強度對光電流的影響 25
第4節 電導對光響應的影響 28
第5節 大氣壓力對響應度的影響 30
第6節 光波長對響應度的影響 34
結論 39
參考文獻 40

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