此研究的目的在於探討如何研製一個用於自動化測試設備上，測試四頻手機用的高頻測試載板 (850 MHz GSM-USA, 900 MHz GSM, 1.8 GHz DCS,1.9 GHz PCS)。在此研究中，廣泛嚴謹地探討高頻測試載板上的關鍵零組件的特性，如：高頻繼電器､平衡-非平衡轉換器､高頻同軸電纜､電路板層與層之間的穿孔､微帶線效應､以及在高頻電路板佈線所須注意的事項。為了了解電路板在高頻的特性，特別準備一個實驗載板。在此實驗載板中，使用了 FR4及 Rogers 等不同基板､不同的微帶線電路結構及不同的板層與板層之間的穿孔結構，並加以量測比較。緊接著與高頻測試載板供應商合作，進行高頻測試載板的電磁模擬。在此模擬中，如:關鍵路徑上之平衡-非平衡轉換器､電壓控制振盪器的迴路濾波電路及測試插座均列入模擬，以檢視共振頻率是否出現在所設計的工作頻帶中。一個使用FR4材料的高頻測試板，便依模擬結果製造出來。這個高頻測試板，首先在離線的儀器設備上，稍做除錯及必要的調整，以確定功能正常。在調整過程中，匹配網路上的零件值，先採用模擬的建議值，接著用網路分析儀，量取其響應，並進行微調。微調是靠改變零件值或改變零件位置，以改變其響應。四個頻道的匹配網路，均依此方法達成微調。微調之後便可在Teradyne 自動化測試設備m-Flex上做量測及驗證。其方法是使用70個產品在同一部測試設備上，使用本論文所研製的測試載板及由母廠製造的測試載板，個別測試兩次。量測的資料便使用統計分析工具(Data Power) 加以分析，並計算其平均值､變異數､Cpk (Biased Process Capability) ､R&R (Repeatability and Reproducibility)．．． 等參數。由統計分析結果得到的結論是: 本論文中所研發的高頻測試載板符合原廠規格，而且可以使用於量產上。從此研究中，成功地建立了射頻載板的研發製程。在此研發製程中將大量倚重模擬以確保射頻載板的品質及功\能而非如傳統地倚靠經驗與錯誤嘗試。

This research aims at the development of a RF mass production load board for 4 bands cellular phone (850 MHz GSM-USA, 900 MHz GSM, 1.8 GHz DCS and 1.9 GHz PCS). To construct a strong theoretical foundation, the characteristics of key components such as relays, balun, cables, vias, micro strip line on the load board and the RF rules for PCB layout are extensively studied. An experimental load board is also specially designed to study the characteristics of RF printed circuit board. In this experimental load board, different materials (FR4 and Rogers) and transmission lines (microstrip lines and differential lines) are specially made and measured. After studying this experimental load board, we co-work with the RF load board supplier KeyStone to do the simulation as the preparation of production load board. In this simulation, the actual layout (Gerber file) of critical path together with the socket is checked for the resonance frequency. The production load board is manufactured in FR4 and debugged in the off-line debugging station before a correlation process in the ATE (automatic test equipment). Fine tune of 4 bands matching circuit is done by changing the value and/or the position of component on the matching circuit with VNA. After the fine tune, 70 good devices were tested twice on the same u-Flex tester with the developed load board and the one sent from test center in Europe (reference loadboard). The test results are processed by statistics tool “Data Power” to calculate the mean value, variance, Cpk (biased process capability), R&R (Repeatability and Reproducibility), etc. The statistics results show the performance of the developed RF load board and the one from the test center in Europe is compatible and can be released for mass production. From this research, design flow of RF loadboard, highly relies on simulation to guarantee the performance of RF loadboard instead of basing on experience and/or trial and error, has been built up

Contents
1 Introduction 09
1.1 Motivation. 09
1.2 Key components on RF loadboard 11
1.3 Function of DUT 12
1.4 Fractional-N synthesizer 15
1.5 The Fraction-N Schematic of the DUT (Device Under Test) 17
1.6 The VCO Tank 21
1.7 The Loop Filter 22
1.8 The Balun 26
1.9 The Balun Used in Locally Developed Loadboard 29
1.10 The PCB 33
1.10.1 The PCB Layout 34
1.10.2 The Trace 37
1.10.3 The Via. 38
1.10.4 The Cable 40
1.10.5 The Relay 41
2 Development fo Implementation 46
2.1 The Experiment. 46
2.1.1 The PCB Stack Up 47
2.1.2 The Micro Strip Line Comparison 48
2.2 The Locally Developed RF PCB 58
2.3 The Design Flow of Locally Developed RF PCB 60
2.4 The Fine Tune Process and The Equipment List for RF PCB 62
2.4.1 Tx_L Balun 63
2.4.2 Transmitter High Band (Tx_H) 67
2.4.3 Rx_GSM US 850 MHz (Rx_GSM US 850) 71
2.4.4 Rx_GSM 900 MHz 75
2.4.5 Rx_DCS 1800 MHz Balun 78
2.4.6 Rx_PCS 1900MHz MHz Balun 81
3 Result Comparison and Discussion 84
3.1 Result for 2nd Correlation 90
3.2 Explanation for % R&R over 30 91
3.2.1 Discussion for High %R&R of Xout_out_Volt 91
3.2.2 Discussion for High %R&R of TXPCS_Vt_Main (Tn641) 95
3.2.3 Discussion for High %R&R of RXGSMUS_Gmid 100
3.2.4 Discussion for High %R&R of TXDCS_Isolation 102
3.2.5 Discussion for High %R&R of AM_AC_Inl_Pos 106
3.2.6 Discussion for High %R&R of RXDCS_MisG_Gmax 108
3.3 Explanation for % R&R Values from 30 down to 10 110
3.3.1 Discussion for %R&R of TXGSM_Spur@268K 110
3.3.2 Discussion for %R&R of CVCO3_TX_PCS. 112
3.3.3 Discussion for %R&R AM Fc@460K 115
3.3.4 Discussion for %R&R of TXGSM_R_Im_Min 116
3.3.5 Discussion for %R&R of RXGSMUS_Gmin 118
3.3.6 Discussion for %R&R of TXGSM_Spur@134K 121
3.3.7 Discussion for R&R of TXDCS_Spur@400K 122
3.3.8 Discussion for %R&R of TXGSMUS_R_Im_Min 125
3.3.9 Discussion for %R&R of TXDCS_R_Im_Min 127
3.3.10 Discussion for R&R of RXGSMUS_IP3_Gmax 129
3.3.11 Discussion for R&R of TXPCS_R_Im_Min 132
3.3.12 Discussion for %R&R of RXGSMUS_CP1_Gmi 134
3.3.13 Discussion for %R&R of RXDCS_CP3_Gmax 136
3.3.14 Discussion for %R&R of TXGSMUS_Isolation 140
3.3.15 Discussion for %R&R of RXGSM_IP3_Gmax. 142
3.3.16 Discussion for %R&R of RXPCS_CP1_Gmin 145
3.3.17 Discussion for %R&R of RXDCS_IP3_Gmax 147
3.3.18 Discussion for %R&R of TXDCS_Spur@134K 151
3.3.19 Discussion for %R&R of RXDCS_Gmid 153
3.3.20 Discussion for %R&R of TXGSMUS_VGA_Max 155
3.3.21 Discussion for %R&R of CVCO3_TX_GSM 157
3.3.22 Discussion for %R&R of TXGSM_VGA_Max 158
3.3.23 Discussion for %R&R of RXDCS_Gmax 159
3.3.24 Discussion for %R&R of TXDCS_VGA_Max 161
3.3.25 Discussion for %R&R of AM_Gain_63vs16 162
3.3.26 Discussion for %R&R of TXPCS_VGA_Max 163
3.3.27 Discussion for %R&R of CVCO3_TX_DCS 165
4 Conclusion 167
4.1 summary 167
A Appendix 169
A.1 The Tester Configuration 169
A.2 Formulas Power Conversions 170
A.3 STATISTICAL TERMS. 171
A.4 IP3 Test Method 173
A.5 Frequency Setting in Each Band 174
A.6 Flow Chart of Test 175
A.7 Theory of Loop Filter 176
A.8 Actual Frequency Spectrum after FFT 180
References 188

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